Low Optical Density Photoresist: PDM-5040

Promerus’ PDM-5040 photoresist has high etch resistance to reduce line edge roughness.

FeaturesPDM-5040

  • High transparency at 193 nanometer (nm) and 157 nm
  • Inherently etch resistant
  • Low optical density

Overview 

PDM-5040 photoresist is based on cyclic olefin polymer (COP) technology.

With proprietary techniques to polymerize COP, the alicyclic backbone is inherently resistant to the dry-etch conditions without the need to modify pendant functionality.

This etch resistance, coupled with the ability to control end group functionalities, leads to a photoresist with a natural improvement to line-edge roughness (LER).

 

PDM-5040-2

PDM-5040-3

 

Properties

Resist Thickness 225nm
PAB 95 ̊C for 60s
Illumination 193nm, NA 0.60, 2/3 Annular
Reticle 6%HT
PEB 95 ̊ C for 60s
Development 0.26N TMAH, 30s
Target Pattern 120nm L/S

 

Promerus is a technology-driven organization providing advanced material solutions for the next generation of applications. These materials are based on high-purity cyclic olefin polymers that provide outstanding electrical, mechanical, optical and thermal properties. For more information, fill out the form below to explore our full list of materials and applications

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